BJT

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Additional information

BJT

2N2222, 2N3904, 2N3906, 2N5401, 2N5551, 2SC945, A1015, C1815, S8050, S8550, S9012, S9013, S9014, S9015, S9018

Description


2N2222:

2N2222 Amplifier Transistors NPN Silicon

  • Configuration

  • application

usually used as an amplifier

 

  • Max. ratings
Symbol Parameter Value Unit
IC Collector current 600 ma
VCBO Collector-Base Voltage (IE = 0) 75 V
VCEO Collector-Emitter Voltage (IB = 0) 40 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
Ptot Total Dissipation at TC = 25 oC 1.5 w
Fmax Max. switching frequency 3.125 Mhz
hef DC Current Gain 300

2N3904:

SMALL SIGNAL NPN TRANSISTOR 2N3904

  • Configuration

  • Application
    • WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT
    • SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE
  • Maximum Ratings
Symbol Parameter Value Unit
IC Collector current 200 ma
VCBO Collector-Base Voltage (IE = 0) 60 V
VCEO Collector-Emitter Voltage (IB = 0) 40 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
Ptot Total Dissipation at TC = 25 oC 625 mw
Fmax Max. switching frequency 3.1 Mhz
hef DC Current Gain 300

2N3906:

2N3906 General Purpose Transistors PNP Silicon

  • Configuration

  • application
    • WELLGENERAL PURPOSE
    • WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT
    • SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN
  • Max. ratings
Symbol Parameter Value Unit
IC Collector current 200 ma
VCBO Collector-Base Voltage (IE = 0) 40 V
VCEO Collector-Emitter Voltage (IB = 0) 40 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
Ptot Total Dissipation at TC = 25 oC 250 mw
Fmax Max. switching frequency 2.7 Mhz
hef DC Current Gain 300

2N5401:

Amplifier Transistors 2N5401 PNP silico

  •  Configuration

  • Application

Mostly used as an amplifier

  • Maximum Ratings
Symbol Parameter Value Unit
IC Collector current 600 ma
VCBO Collector-Base Voltage (IE = 0) 160 V
VCEO Collector-Emitter Voltage (IB = 0) 150 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
Ptot Total Dissipation at TC = 25 oC 625 mw
hef DC Current Gain 300

2N5551:

2N5551 Amplifier Transistors NPN Silicon

  • Configuration

 

  • Applecations

mostly used as an amplifier

 

  • Max. ratings
Symbol Parameter Value Unit
IC Collector current 600 ma
VCBO Collector-Base Voltage (IE = 0) 180 V
VCEO Collector-Emitter Voltage (IB = 0) 160 V
VEBO Emitter-Base Voltage (IC = 0) 6 V
Ptot Total Dissipation at TC = 25 oC 1.5 w
hef DC Current Gain 300

 


2SC945:

AUDIO FREQUENCYAMPLIFIER HIGH FREQUENCY OSC.

NPN TRANSISTOR

  • Configuration

  • Application
    • Low current switches
    • Pre-amplifiers
    • H-bridge circuits for low power motors
    • Audio frequency amplifier circuits
    • Oscillator circuits
  • Features
    • Japanese High frequency amplifier NPN Transistor
    • Current Gain (hFE) high linearity
  • Max. ratings
Symbol Parameter Value Unit
IC Collector current 150 ma
VCBO Collector-Base Voltage (IE = 0) 60 V
VCEO Collector-Emitter Voltage (IB = 0) 50 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
Ptot Total Dissipation at TC = 25 oC 250 mw
hef DC Current Gain 600

A1015:

LOW FREQUENCY AMPLIFIER

  • Configuration

  • Application
    • Switching
    • Driver stage amplifier action
    • AF amplifier
    • Can be used Darlington pair
    • Used in making led flasher
  • Max. ratings
Symbol Parameter Value Unit
IC Collector current 150 ma
VCBO Collector-Base Voltage (IE = 0) 50 V
VCEO Collector-Emitter Voltage (IB = 0) 50 V
VEBO Emitter-Base Voltage (IC = 0) V
Ptot Total Dissipation at TC = 25 oC 400 mw
hef DC Current Gain 400

 


C1815:

NPN EPITAXIAL PLANAR TRANSISTOR

  • Configuration

  • Application
    • Designed for use in driver stage of AF amplifier general purpose amplification
  • Max. ratings
Symbol Parameter Value Unit
IC Collector current 150 ma
VCBO Collector-Base Voltage (IE = 0) 60 V
VCEO Collector-Emitter Voltage (IB = 0) 50 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
Ptot Total Dissipation at TC = 25 oC 400 mw
hef DC Current Gain 700  

S8050:

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP

TRANSISTOR

  • Configuration

  • Application
    • Audio Amplification Circuits
    • Class B Amplifiers
    • Push pull Transistors
    • Circuits where high gain is required
    • Low signal applications
  • Maximum Ratings
Symbol Parameter Value Unit
IC Collector current 700 ma
VCBO Collector-Base Voltage (IE = 0) 30 V
VCEO Collector-Emitter Voltage (IB = 0) 20 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
Ptot Total Dissipation at TC = 25 oC 1 w
hef DC Current Gain 400  

 


S8550:

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP

TRANSISTOR

  • Configuration

  • Application
    • Audio Amplification Circuits
    • Class B Amplifiers
    • Push pull Transistors
    • Circuits where high gain is required
    • Low signal applications
  • Maximum Ratings
Symbol Parameter Value Unit
IC Collector current 700 ma
VCBO Collector-Base Voltage (IE = 0) 30 V
VCEO Collector-Emitter Voltage (IB = 0) 20 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
Ptot Total Dissipation at TC = 25 oC 1 w
hef DC Current Gain 400  

 


S9015:

Pnp general purpose application

  • Configuration

  • Application
    • General purpose
    • Switching application
  • Maximum Ratings
Symbol Parameter Value Unit
IC Collector current 100 ma
VCBO Collector-Base Voltage (IE = 0) 50 V
VCEO Collector-Emitter Voltage (IB = 0) 45 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
Ptot Total Dissipation at TC = 25 oC 450 mw
hef DC Current Gain 600  

S9018:

NPN Silicon Transistors

  • Configuration

  • Maximum Ratings
Symbol Parameter Value Unit
IC Collector current 50 ma
VCBO Collector-Base Voltage (IE = 0) 25 V
VCEO Collector-Emitter Voltage (IB = 0) 18 V
VEBO Emitter-Base Voltage (IC = 0) 4 V
Ptot Total Dissipation at TC = 25 oC 0.4 w
hef DC Current Gain 270  

 

Cabling & Coding

Cabling Vedio:

Code:

 

 

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